| 摘要 |
PURPOSE:To reduce VTM for a forward voltage drop and a latching current without reducing a gate turn-OFF capacity of the original features of a GTO by specifying the ratio of the area of an emitter to the peripheral length of the emitter. CONSTITUTION:The ratio E of the area AE(cm<2>) of an emitter to the peripheral length LE(cm) of the emitter is limited to F<=50 on the basis of data obtained by an actual trial product. For example, a GTO of divided emitter structure which has 0.6mm. of width of the emitter and 5mm. of the length of the emitter is trially produced. The value of F of this GTO is approx. 37. An increase in the turning OFF time and the large decrease in the gate turn OFF current occurred in the conventional GTO, but the decrease in the gate turn OFF current is within 5% as compared with the GTO of F 80, the increase in the gate turn OFF time is approx. 5-7%, which are not drawbacks. On the other hand, the decrease in VTM has arrives at 25%. |
