| 摘要 |
PURPOSE:To enable to operate a field effect transistor at a high speed by forming a source and a drain of Ga1-XAlXAs. CONSTITUTION:An i-GaAs layer 11 is formed as a buffer layer on a semi-insulating GaAs substrate 10, and an active layer N type GaAs layer 12, electrode layer N<+> type Ga0.7Al0.7As layer 13, 18, and a contacting layer N<+>-GaAs layer 14 are sequentially grown thereon. An AuGe/Au film 15 is deposited as current injecting contact to drain and source on the obtained wafer, and an alloying heat treatment is performed to ohmically contact the layer 14. A gate part is ethced at the layers 13, 18 through a hole formed at an SiO2 film 16. The etching is stopped at the boundary surface between the layer 12 and the layers 13, 18. Accordingly, the channel thickness tG' directly under a gate electrode 17 is just equal to the thickness of the layer 12. A Schottky gate electrode 17 is formed by aluminum depositing and lifting technique. |
