| 摘要 |
PURPOSE:To obtain a high-quality single crystal of a III-V group compound while inhibiting the scattering of the V group element by interposing a crystal plate consisting of the same elements that form a molten semiconductor of the III-V group compound between a mixture of starting materials and a liq. sealant in a crucible and by synthesizing a melt by heating. CONSTITUTION:When a crucible 4 is heated in a synthesizing stage, B2O3 begins to soften at about 300 deg.C and fills the gap between a GaAs single crystal plate 5 and the crucible 4. At the same time, the volatilization of As as a starting material proceeds, and a GaAs-Ga solid soln. is formed at 600 deg.C along the contact surface 6 between the bottom of the plate 5 and Ga 1 as a starting material. Gaseous As volatilized from As in the molten Ga diffuse and rise in the molten Ga by buoyancy, and it reaches a Ga-GaAs solid-liq. coexisting region. The gaseous As combines with Ga in the region to form GaAs by an amount generating equilibrium at the temp., and the GaAs grows epitaxially under the bottom of the plate 5, forming a deposited layer 7. All of the starting materials 1, 2 are finally converted into a solid GaAs crystal, and when the temp. exceeds 1,238 deg.C, molten GaAs 8 is prepd. |
