发明名称 Multiple bit output dynamic random-access memory
摘要 A dynamic MOS random-access memory is described which includes a circuit for permitting checking of the on chip refresh counter. The memory also includes a refresh generator, the frequency of which automatically varies to compensate for temperature variations. Other innovations include an arbitration circuit, a hidden refresh function and unique accessing of redundant lines.
申请公布号 US4453237(A) 申请公布日期 1984.06.05
申请号 US19830483772 申请日期 1983.04.11
申请人 INTEL CORPORATION 发明人 REESE, EDMUND A.;SPADERNA, DIETER W.;FLANNAGAN, STEPHEN T.
分类号 G11C11/406;G11C11/56;G11C29/00;G11C29/02;(IPC1-7):G11C11/40 主分类号 G11C11/406
代理机构 代理人
主权项
地址