发明名称 |
Multiple bit output dynamic random-access memory |
摘要 |
A dynamic MOS random-access memory is described which includes a circuit for permitting checking of the on chip refresh counter. The memory also includes a refresh generator, the frequency of which automatically varies to compensate for temperature variations. Other innovations include an arbitration circuit, a hidden refresh function and unique accessing of redundant lines. |
申请公布号 |
US4453237(A) |
申请公布日期 |
1984.06.05 |
申请号 |
US19830483772 |
申请日期 |
1983.04.11 |
申请人 |
INTEL CORPORATION |
发明人 |
REESE, EDMUND A.;SPADERNA, DIETER W.;FLANNAGAN, STEPHEN T. |
分类号 |
G11C11/406;G11C11/56;G11C29/00;G11C29/02;(IPC1-7):G11C11/40 |
主分类号 |
G11C11/406 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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