发明名称 |
MOS Static RAM layout with polysilicon resistors over FET gates |
摘要 |
A semiconductor device having a semiconductor substrate, wherein first and second insulating gate FET transistor connected, respectively, in series with first and second polycrystalline silicon layers acting as loads of first and second inverters are formed. The first polycrystalline silicon layer is provided above a gate electrode of the second insulation gate FET transistor, and the second polycrystalline silicon layer is provided above a gate electrode of the first insulation gate FET transistor.
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申请公布号 |
US4453175(A) |
申请公布日期 |
1984.06.05 |
申请号 |
US19800187794 |
申请日期 |
1980.09.16 |
申请人 |
TOKYO SHIBAURA DENKI KABUSHIKI KAISHA |
发明人 |
ARIIZUMI, SHOJI;SEGAWA, MAKOTO |
分类号 |
G11C11/412;G11C11/418;H01L21/02;H01L21/764;H01L23/528;H01L27/06;H01L27/11;(IPC1-7):H01L27/04;H01L29/78;G11C11/40 |
主分类号 |
G11C11/412 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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