| 摘要 |
A field-effect capacitance includes a first region of a first conductivity type in a semiconductor layer, which region is provided with at least one contact electrode connected to a first terminal and with an insulated electrode arranged on said region and connected to a second terminal. A second semiconductor region of a second conductivity type opposite to the first conductivity type is formed in the semiconductor layer, which second region is provided with at least one contact electrode coupled to the first terminal, and with an insulated electrode arranged on said second region and connected to the second terminal. The two capacitances thus formed are then alternately operative for alternate polarities of the signal voltage. The resulting capacitance structure is suitable for high signal voltage applications, and provides a smooth transition when alternate signal polarities are applied.
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