| 摘要 |
PURPOSE:To form a photomask having a fine mask pattern of high accuracy by treating a mask substrate with an aqueous surfactant soln. CONSTITUTION:A substrate is coated with an electron beam resist polymer contg. halogen to form a resist layer. The desired parts of the resist layer are patterned with electron beams, and the resist layer is developed. A mask substrate is treated with a surfactant soln., and using the resulting resist pattern as a protective film, the exposed surface of the mask substrate is chemically etched. Said treatment with the surfactant soln. is carried out by immersing the whole substrate in the soln. or spraying the soln. on the substrate. The treatment time depends on the kinds of the resist polymer and the surfactant soln., and the time is suitably adjusted. |
