| 摘要 |
PURPOSE:To enable to perform a high degree of positioning by a method wherein a resist is applied, the resist is removed by jetting out a thinly narrowed high pressure liquid on the resist located on the mark part, the mark part is exposed and an electron beam is scanned on the mark part. CONSTITUTION:A positioning mark 2 is formed on a semiconductor substrate 1 and a resist 4, whereon the prescribed pattern will be exposed using an electron beam, is applied on the substrate 1. Polymethyl methacrylate, for example, is used for the resist 4. Then, highly pressured and thinly narrowed pure water 10 is jetted out from a nozzle 9 on the resist 4 located on the mark 2 and the resist 4 located at the part above-mentioned is removed. Through these procedures, an electron beam 5 is scanned in X-axis and Y-axis directions on the mark 2 part exposed on the substrate 1, and a positional measurement is performed by detecting a reflected electron 6 using a detector 7. The signal waveform detected by the detector 7 is indicated on an indicating device 8. |
