| 摘要 |
PURPOSE:To prevent the contamination in a vacuum treatment chamber and to enable continuous sputtering treatment of many substrates in the stage of subjecting many substrates to a sputtering treatment by using cylindrical deposition preventive shields. CONSTITUTION:A sputtering treatment device is constituted of a rotating member 3 combined radially with four pieces of cylindrical deposition preventing shields 2 in a vacuum chamber 1. A substrate 4 to be subjected to a sputtering treatment is put through the inside of a pressure regulation chamber 8A in a feed path 5 into the chamber 1, and is attached to the substrate holder 12 of the shield 2 in the part A. Gaseous Ar 10 is supplied from the central part in the chamber 1 and the substrate 4 is ion cleaned by a reverse sputtering treatment. The member 3 rotates 90 deg. and the substrate 4 comes to the position B where the surface thereof is subjected to the sputtering treatment. The member 3 is rotated by 90 deg. in succession to the position C from which the substrate is removed through a pressure regulation chamber 8B to the outside. The contamination on the inside surface of the chamber 1 by the particles of the sputtering metal is obviated by the use of the cylindrical deposition preventive shields. |
