| 摘要 |
<p>PURPOSE:To form respective electrodes and insulating films at high yield by forming the insulating films for gate electrodes through anodic oxidation, and connecting gate electrodes together by a transparent conductive film and forming a thin-film transistor. CONSTITUTION:A material which can be anodized is vapor-deposited on a substrate and etched according to a pattern diagram to form the gate electrodes 41 and anodic oxidation carried out after coupling materials for the electrodes 41 are constituted of vapor deposition and etching. Then, it is not necessary to cover the body with resist, so no pinhole is formed. Further, the transparent conductive film is vapor-deposite and etched to form row electrodes 42, column electrodes 43, and picture element electrodes 10, and the thin-film TR is composed of a semiconductor film 44, source and drain electrode 45, and gate electrode 41 which are formed afterward. Therefore, the generation of pinholes in the anodic oxidation is eliminated and the transparent conductive film is used, so a bright liquid-crystal display device is obtained.</p> |
