发明名称 Improvement to photovoltaic cells with a CdS-based polycrystalline layer
摘要 A CdS-based cell is formed from a CdS-Cu2S junction. A layer of a dielectric oxide 7 or of a similar compound is placed on the Cu2S layer 5 to prevent contact between the CdS layer 3 and the electrode 6 placed on the dielectric layer 7. Such cells have, in particular, a lower level of defects. <IMAGE>
申请公布号 FR2536913(A1) 申请公布日期 1984.06.01
申请号 FR19820019752 申请日期 1982.11.25
申请人 SAINT GOBAIN RECHERCHE SA 发明人 OLIVIER MARIS
分类号 H01L31/0224;H01L31/0336;(IPC1-7):H01L31/06 主分类号 H01L31/0224
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