发明名称 |
Improvement to photovoltaic cells with a CdS-based polycrystalline layer |
摘要 |
A CdS-based cell is formed from a CdS-Cu2S junction. A layer of a dielectric oxide 7 or of a similar compound is placed on the Cu2S layer 5 to prevent contact between the CdS layer 3 and the electrode 6 placed on the dielectric layer 7. Such cells have, in particular, a lower level of defects. <IMAGE>
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申请公布号 |
FR2536913(A1) |
申请公布日期 |
1984.06.01 |
申请号 |
FR19820019752 |
申请日期 |
1982.11.25 |
申请人 |
SAINT GOBAIN RECHERCHE SA |
发明人 |
OLIVIER MARIS |
分类号 |
H01L31/0224;H01L31/0336;(IPC1-7):H01L31/06 |
主分类号 |
H01L31/0224 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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