| 摘要 |
<p>Method for manufacturing a semi-conducting device, comprising a sensitive front side and a back side so arranged as to provide a ohmic contact, having a semi-conducting substrate, such as silicium, in the shape of a slice, which comprises making a junction on the front side of the semi-conducting substrate slice, by diffusing therein a doping material, coating the doped front side with an anti-reflecting material layer, covering by silk-screening the anti-reflecting material layer with a layer of a silver-based paste, applying by silk-screening over a large part at least of the back side from the semi-conducting substrate slice, a first layer formed by an aluminum paste, and applying by silk-screening over the first aluminum layer, a second layer the covering rate of whch lies between 10 and 40%, formed either by a paste on the basis of silver and palladium.</p> |
