发明名称 MOS TYPE SENSOR
摘要 PURPOSE:To provide a titled sensor which is unaffected by a change in temp. without providing any temp. compensation circuit by maintaining drain current at a specified value which does not change with a change in temp. and performing detection with the change in the gate voltage prior to detection and the gate voltage after the detection. CONSTITUTION:A load impedance ZL and an amplifier circuit A1 are connected to the drain terminal of an MOSFETT1. A source voltage V66 is impressed to the impedance ZL. The gate of the T1 is connected to the output terminal of the circuit A1 and the output terminal is connected. The source terminal of the T1 is grounded. The gain of the circuit A1 is mu. The T1 has both voltage sensing and amplifying functions. The change in the drain current of the T1 on account of voltage is fed back to the gate terminal of the T1 and the feedback controlled variable thereof DELTAV9 is determined as the change in the output corresponding to the change in the impressed voltage.
申请公布号 JPS5995420(A) 申请公布日期 1984.06.01
申请号 JP19820204668 申请日期 1982.11.24
申请人 HITACHI SEISAKUSHO KK 发明人 TANABE MASANORI;KAWAKAMI HIROJI
分类号 G01D5/14;G01D5/18;G01L1/18;G01L9/00;G01L9/06;G01N27/00;G01N27/07;G01N27/12;G01N27/414;H01L29/84 主分类号 G01D5/14
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