| 摘要 |
PURPOSE:To improve the accuracy of finishing by previously bringing a distance between the other electrode and a semiconductor substrate to be etched to an adjustable state when a projecting section is formed at the central section of the surface of an etching treatment base having one electrode function, the substrate is placed on the projecting section, the other electrode is disposed on the substrate and these projecting section, electrode and substrate are covered with a reaction pipe. CONSTITUTION:The projecting section is formed at the central section of the surface of the etching treatment base 6 having the function as one electrode, and the semiconductor substrate 5 to which a photo-resist process is executed previously is placed on the projecting section. The reaction pipe 3, which has a gas introducing pipe 1 and a gas discharge pipe 2 and the inside thereof encases the other electrode 4, is placed on the treatment base 6, but a screw vertically moving the electrode 4 is projected to the outside and set up at the central section of the electrode 5 at that time, and the distance between the electrode 4 and the substrate 5 is brought previously to the adjustable state, or the treatment base 6 may be moved vertically. Accordingly, the distance is shortened at the beginning of etching and lengthened in the vicinity of an end point by utilizing a fact that an etching speed is slowed when the distance is increased. |
