| 摘要 |
PURPOSE:To improve the flatness of interlayer insulating film layer remarkably eliminating the step disconnection on the upper wiring layer by a method wherein, after depositing the first insulating film, the first insulating film on the lower wiring is removed to deposit the second insulating film. CONSTITUTION:After forming a lower wiring layer 4 on an insulating layer 2 on a semiconductor substrate 1, an insulating film 3 is deposited. Next a photoresist pattern 6 is formed and only the insulating film 3 on the lower wiring 4 is removed by etching the insulating film 3 while the interlayer insulating films 3, 7 with their surfaces remarkably flattened are formed by depositing the insulating film 7. The upper wiring layer 5 may be formed with almost no irregularities at all since said interlayer insulating layers 3, 7 are remarkably flattened. |
