| 摘要 |
PURPOSE:To reduce the thickness of a resist film by forming a metal thin film on a material to be etched, forming a desired pattern on said material by the application of a dry etching method, and thereby increasing the resisting property of an EB resist against dry etching. CONSTITUTION:A layer 3 consisting of aluminum is formed on the whole surface of a layer 2 consisting of non-dope silicon dioxide which is formed on a substrate 1 consisting of silicon. An EB resist 4 is formed on the entire surface of said aluminum layer 3, and then patterning is applied thereto to form an opening 5 by using an electron beam exposure method. Prior to the etching of the non-dope silicon dioxide layer 2, the part of the aluminum layer exposed in said opening 5 is removed, and thereby another opening 5' is formed. Subsequently, the dry etching of the non-dope silicon dioxide layer 2 is performed to provide an opening 5'', and thereby the patterning is completed. After this process is ended, the remaining EB resist and aluminum layer are removed. |
