| 摘要 |
PURPOSE:To prevent the pollution of a metal to the wafer effectively by supporting one main surface of the wafer by a spring and supporting the other main surface by a nonmetallic material when the wafer holder for holding the semiconductor wafer is used on ion-implantation treatment. CONSTITUTION:When ions X are implanted to one main surface of the semiconductor wafer 30, an annular SiO2 interposing member 36 is formed around one main surface of the wafer 30, and the member is held down by an upper side hold-down member 38 consisting of Al, etc. A lower side hold-down member 32 made of Al is set up on the other one main surface side through a spring member 34. Consequently, the wafer 30 is not polluted by the metal, ions X do not collide with the member 36 even when the member 36 is made of an insulator when the diameter of the aperture of the member 38 is made previously smaller than that of the member 36, and the charge-up of the member is avoided. Accordingly, ions X are not bent and go straight on, and ions are irradiated uniformly. |
