发明名称 PHOTOMASK FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PURPOSE:To inhibit the formation of an air or nitrogen layer between a photomask and a substrate and to separate easily the photomask from the substrate by piercing a through-hole in the photomask in the thickness direction. CONSTITUTION:A through-hole 6 of 10-50mumphi is pierced in a photomask 1 at an arbitrary position such as the position of a scribed line. When the photomask 1 is brought into contact with a substrate 2, air or nitrogen 5 present between the photomask 1 and the substrate 2 is vented from the hole 6, and the photomask 1 contacts perfectly the substrate 2. When the photomask 1 is separated from the substrate 2 after exposure, air or nitrogen penetrates from the hole 6, so the photomask 1 can be easily separated from the substrate 2.
申请公布号 JPS5994757(A) 申请公布日期 1984.05.31
申请号 JP19820204750 申请日期 1982.11.22
申请人 NIPPON DENKI KK 发明人 TANAKA MASATO
分类号 G03F1/60;H01L21/027 主分类号 G03F1/60
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