| 摘要 |
PURPOSE:To make the element finer and higher integrated by a method wherein an oxide film separating process preventing or restricting a projecting or a inroading of a field oxide film into an element region from occuring is performed. CONSTITUTION:An oxide film 2 and a nitride silicon film 3 are formed on a silicon substrate 1 to be etched leaving the nitride silicon film 3 only in the element forming region. Then the oxide film 2 is selectively removed exposing the silicon substrate 1 to enter slightly into the part right below the end of the nitride silicon film 3. Another nitride silicon film is formed on the surface of a field region to be selectively removed forming the other nitride silicon film 5'. Then a field oxide film 4 is formed by thermal oxidation. In such a constitution, any bird beak and bird head may be prevented or restricted from occuring since the nitride silicon films 5' restrict any oxidation at the ends. |
