| 摘要 |
<p>PURPOSE:To prevent the application of mechanical pressure to a barrier and to prevent the deterioration of characteristics by selectively exposing a metal wiring layer at the part which is isolated from a Schottky barrier, and providing a bump electrode. CONSTITUTION:A window is opened at an SiO2 film 3 at the position isolated from the center of an Si pellet, a metal film 4 is ohmically contacted, and a resist mask 11 which is opened with a window 12 at the central position of the pellet is then provided. An Ag bump electrode 5 is formed by electric plating on the film 4, and the mask 11 is removed. According to this configuration, in case of assembly a double heat sink type diode, mechanical pressure is not applied to a Schottky barrier.</p> |
