| 摘要 |
<p>PURPOSE:To prevent undesired ON operation of an amorphous SiFET without light shielding film by setting the ON/OFF of a current between the source and the drain of a transistor to approx. 10<3> or higher when a light of approx. 3,000 lux is emitted to the gate. CONSTITUTION:When the flow rate of SiH4 gas is reduced, the growing velocity of amorphous Si is decelerated, an amorphous Si layer of the prescribed thickness is grown and an FET is formed, ON/OFF ratio is improved substantially in a linear relation to the growing velocity, and even if a light of approx. 3,000 lux or larger is emitted, the ratio can be increased to 10<3> or higher without light shielding film. Accordingly, the FET of OFF state does not undesirably become ON due to the increase in the OFF current, and is adapted for a display panel or the like.</p> |
