| 摘要 |
PURPOSE:To minimize the fluctuation of degree of diffusion of impurities while attaining higher yield of the semiconductor, by providing an apparatus having a cylindrical core tube provided at its both ends with gas discharging openings and a gas supplying pipe disposed in the core tube to extend in the axial direction and provided in the lower side thereof with a plurality of gas jetting nozzle ports, through which a gas supplied from both axial ends of the gas supplying pipe is discharged. CONSTITUTION:A core tube 11 is connected at its one end to a gas discharging pipe 12 and at its other end to another gas discharging pipe 15 attached to a cover 14 closing this end of the tube 11, so that the gas in the core tube 11 can be discharged from both axial ends of the core tube 11. A gas supplying pipe 16 is disposed at an upper part of the space in the core tube 11 and extends in the axial direction thereof. The gas supplying pipe 16 is provided at its lower side with a multiplicity of gas jetting nozzle ports 17, and is adapted to be charged with an impurity-containing gas from both ends thereof as shown by arrows. According to this arrangement, the semiconductor wafer 5 can be uniformly contacted by the gas which is jetted vertically downwardly so that the diffusion of impurities can be achieved with a high uniformity, i.e., the fluctuation of degree of diffusion is minimized. it is to be noted also that the gas can be distributed uniformly over the wire range in the core tube. |
