| 摘要 |
PURPOSE:To prevent the adhesion of dust on the treating surface of a wafer by inserting the wafer into a preparatory chamber in a tank while directing the treating surface downward by the turn of an arm on the outside of the vacuum tank and moving and treating the wafer as it is. CONSTITUTION:When the Si water (A) is forwarded to a position 47a, the arm 45 attracts the wafer and is turned, and the wafer is placed on a device 28 in the preparatory chamber 40 while the treating surface is directed downward through the opening and closing of a valve 41 and the ascent and descent of the device 28. The chamber 40 is evacuated in the same manner as the vacuum tank 1, the wafer (A) is connected at the lower end of an arm 38, a valve 24 and inlets 22, 23 are opened and closed, and the wafer is carried to a treating chamber 2 and placed on the plate 8 of a device 5. The device 5 is elevated, the wafer is chucked electrostatically to an upper plate 10, a magnet 16 is reciprocated, and the wafer is etched by plasma formed to a lower section. The device 5 is elevated and receives the wafer after treatment. The wafer is carried out while the treating surface is directed upward from a treating chamber on the outlet side by the mechanism of a carry-in to the treating chamber and a reverse process. According to the constitution, the adhesion of dust on the wafer avoided, and the wafer is treated automatically. |
