| 摘要 |
PURPOSE:To contrive to shorten the number of processes by omitting a time of mask step to form an ion implanted layer only at a fixed region by removing the unnecessary part except under the first gate electrode at the same time when the first gate electrode is formed. CONSTITUTION:A field oxide film 22, the first gate oxide film 23, and the N type purity ion implanted layer 24 are formed on the surface of a P type Si single crystal substrate 21. A poly Si 25 is adhered, a resist pattern 26 is formed at the part becoming the first gate electrode, and the poly Si 25, the first gate oxide film 23, and the N type impurity ion implanted layer 24 are removed by etching. An insulation film 30 is formed of a phosphorus glass, etc., and a metallic wiring 32, and a protection film 33 are formed, resulting in obtaining a one transistor-one capacitor type MOS dynamic RAM cell of a double layer poly Si structure. |
