发明名称 ELECTRON BEAM DEVICE
摘要 PURPOSE:To make a shift value settable within a tolerance limit without preparations for any correction data, by installing both of a deflecting device which tilts the axis of an electron beam and a driving device which shifts an energy analyzer stage and a sample stage. CONSTITUTION:Beam shift values DELTAx and DELTAy are multiplied by prearranged coefficients (values found by tests) alpha, beta and gamma, and each value, namely, alphaDELTAx, alphaDELTAy; betaDELTAx, betaDELTAy; gammaDELTAx and gammaDELTAy are fed to an adder 7, an analyzer stage driving circuit 19 and a sample stage driving circuit 23 which all correspond to these value, whereby an electron beam axis tilting deflection 2, an analyzer stage 15 and a sample stage 21 are controlled. Detection for suchlike values takes place while resetting the initial value to the prearranged value over again, and a point where beam shift values DELTAx and DELTAy become below the tolerance is to be found out; the tilt of the electron beam axis, the driving position of the analyzer stage and also the driving position of the sample stage 21 are all set down as setting conditions for a semiconductor element to be offered to measurement thereafter.
申请公布号 JPS5994352(A) 申请公布日期 1984.05.31
申请号 JP19820204805 申请日期 1982.11.22
申请人 FUJITSU KK 发明人 ITOU AKIO;GOTOU YOSHIAKI;ISHIZUKA TOSHIHIRO;OZAKI KAZUYUKI;FURUKAWA YASUO
分类号 H01J37/28;G01R31/302;H01J37/26;H01L21/66 主分类号 H01J37/28
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