发明名称 METHOD FOR SUPPLYING COPPER ION TO ELECTROLESS COPPER PLATING SOLUTION
摘要 PURPOSE:To suppress the deposition of copper particles and to improve the reliability of a plated product by cooling the electroless copper plating soln. drawn from a plating cell then replenishing and mixing a soln. contg. copper ion having the concn. of the copper ion at the lower equiv. then the concn. of a complexing agent into and with said soln. CONSTITUTION:A plating soln. is drawn from a main cell 1 for an electroless copper plating soln. and is cooled with a cooler 7 to an ordinary temp. and the temp. lower by 10 deg.C than the temp. of the copper plating soln. The cooled soln. is put into a mixing vessel 2 for copper ion contg. soln. A copper ion contg. soln. is replenished from a copper ion contg. soln. supply vessel 3 by a copper ion contg. soln. supply pump 4 into the vessel 2 where the soln. is stirred and mixed by a stirrer 5 to complex the copper ion. The copper ion is thoroughly complexed in the cell 2 to make the concn. of the complexing agent in the copper plating soln. larger in an equiv. ratio than the concn. of the copper ion in the copper ion contg. soln., whereby the deposition of the copper particles is suppressed. Such soln. mixture is returned by a pump 2 into the cell 1.
申请公布号 JPS5993863(A) 申请公布日期 1984.05.30
申请号 JP19820202504 申请日期 1982.11.17
申请人 HITACHI KASEI KOGYO KK 发明人 ENOKIDO TAKESHI;KAMIYAMA KOUJI;HAYASHI TAKASHI;OKAMURA TOSHIROU;NAKASO AKISHI;YAMANOI KIYOSHI
分类号 C23C18/40;C23C18/16 主分类号 C23C18/40
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