| 摘要 |
A semiconductor photoelectric conversion device in which first and second semiconductor layers are formed on a supporting member and P type and N type semiconductor regions are formed in the second semiconductor layer in a manner to extend into contact with the first semiconductor layer, providing a PIN structure. A semiconductor photoelectric conversion device in which first and second semiconductor layers are formed on a supporting member with an insulating or semi-insulating layer, as a barrier, interposed therebetween, and P type and N type semiconductor regions are formed in the second semiconductor layer in a manner to extend into contact with the insulating or semi-insulating layer. Accordingly, there are formed a first MIS structure by the P type semiconductor region, the insulating or semi-insulating layer and the first semiconductor layer and a second MIS structure by the N type semiconductor region, the insulating or semi-insulating layer and the first semiconductor layer.
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