| 摘要 |
PURPOSE:To prevent the generation of short channel effect by ion-implanting an impurity after forming an Si oxy-derivative layer on a semiconductor substrate whereon a gate electrode is formed. CONSTITUTION:After forming a gate insulation film 2 and the polycrystalline Si gate electrode 3 on the Si substrate 1, the Si oxy-derivative layer, e.g., a silanol layer 9 is coat-formed by spin-coating method. At this time, a reservoir of a silanol coating solution forms on the side surface of the polycrystalline Si gate electrode 3, accordingly the thickness of the silanol layer 9 thickens in the neighborhood of the side surface of the gate electrode. When the impurity of reverse conductivity type is ion-implanted into the Si substrate 1 after changing the silanol layer 9 into an Si dioxide film by heat treatment, ion implanted layer 4 and 5 gradually thin toward the neighborhood of the polycrystalline Si gate electrode 3, and then the Si ion implantation is blocked at a part wherein the thickness of the Si dioxide film is over a fixed value. |
