| 摘要 |
PURPOSE:To form a deposition at the microscopic spot of 1mum in diameter or smaller by a method wherein the substance to be deposited is vapor-deposited on a substrate, an ion beam is radiated and an etching is performed in such a manner that the part to be irradiated is left. CONSTITUTION:After a subchamber 16 has been evacuated to the degree of 10<-6> Torr or thereabout, the substance 10 is vapor-deposited in uniform thickness on a sample 8 using an electron beam impact heating type vapor-deposition device. Then, the sample stand 7 carrying the sample 8 is brought into the main chamber 4, and said chamber 4 is evacuated to the degree of 10<-8> Torr or thereabout. Then, the measurement of thickness of the vapor-deposited film is performed utilizing a secondary ion mass spectrometry. Subsequently, an ion beam 9 is radiated on the sample 8, a sputter-etching makes progress, the secondary ion 25 alone of the sample 8 is detected by a quadrupole mass spectrometer 26 and a mass spectrometer controller 27, and the time required is calculated, thereby enabling to select the optimum deposition value of the accelerating energy of the ion beam 9. |
