| 摘要 |
PURPOSE:To miniaturize the chip size by separating an optical black area and an effective picture element area by an insulating film so as to attain stable dark current compensation without the effect of smear. CONSTITUTION:A photosensitive section 14 is formed on the surface of a P layer 12 and a metallic electrode 15 made of aluminum and an aluminum light shield section 16 covering the optical black section are formed via an insulating film 13. In the solid-state image pickup device in this way, even if electrons 8 generated at the depth of a substrate of the effective picture element area are diffused in each direction, the transfer to the optical black area is prevented by the insulating film 13 separating the effective picture element area and the optical black area. Thus, the level of the dark current is not fluctuated. Thus, the stable dark current compensation is attained. Further, in order to eliminate the effect of smear for the dark current compensation, the number of picture elements in the optical black section is reduced and the chip are is reduced. |
