| 摘要 |
PURPOSE:To make it possible to remarkably suppress the generation of snowflakes, by a method wherein, when a deposition film is to be formed on the surface of each of the semiconductor substrates by CVD, the semiconductor substrates are loaded and unloaded in relation to an evaporation boat inside a preheating and warmth-retaining furnace. CONSTITUTION:A deposition film is formed by CVD in such a manner that, with a preheating and heat-retaining furnace 1 heated at about 300 deg.C, a deposition film-forming semiconductor substrate 23 is housed in a predetermined evaporation boat and passed through a CVD clean chamber 3 and is held at 400-500 deg.C in a CVD furnace chamber 4 which is supplied with an SiH4+O2 gas, thereby to make it possible to form a thin SiO2 film as a CVD reaction product on the semiconductor substrate. The preheating and heat-retaining furnace 1 is constituted by a lower furnace body 31 and an upper furnace body 32 which are combined such that they can be opened and closed as desired. Each furnace body is provided with a proper heater 33. While being heated, the upper furnace body 32 and a boat cover 22 are lifted to open the furnace 1, and in this state, the semiconductor substrate 23 is loaded and unloaded. |
