| 摘要 |
PURPOSE:To obtain the LED, in which the linearity of currents-optical output characteristics is improved remarkably without largely damaging fiber coupling power, by forming a region having impurity carrier concentration higher than that of the central section of a light-emitting region in an active layer so as to surround the central section of the light-emitting region. CONSTITUTION:An N type InP layer 11, an InGaAsP layer 12 as the active layer, a P type InP layer 13 and a P type InGaAsP layer 14 as a contact layer are formed on an N type InP substrate 10 in succession, a mask is formed circularly on the surface of the P type InGaAsP layer 14, an N type impurity is implanted selectively and N<+> regions 15 are formed in the active layer. A SiO2 film 16 is formed on the surface of the P type InGaAsP layer 14, a pattern is formed by a photo-resist, and SiO2 is removed circularly. A TiPt film 17 is formed on the surfaces of the P type InGaAsP 14 and the SiO2 film 16, and a P type ohmic electrode 18 is formed through heat treatment in H2 or N2. The N type InP substrate 10 is polished, and AuGeNi evaporated films 19 are formed to the surface. Lastly, N type ohmic electrodes 19 are formed through heat treatment in H2 or N2. |
