| 摘要 |
PURPOSE:To facilitate the manufacture of the Schottky gate field-effect transistor, in which source resistance is small, gm is large, gate capacitance is small and high-frequency characteristics are excellent, by preventing an approach from both sides in a crystal of the equal carrier density curve of carriers by the second implantation. CONSTITUTION:A pattern 21 is formed to the surface of a semi-insulating substrate 20 made of GaAs from an arbitrary material. An implantation layer 22 is formed at a position not masked through the first ion implantation while using the pattern 21 as a mask. The thickness of the implantation layer 22 and carrier density are selected to values through which desired pinch-off voltage is realized. The resist pattern 21 is removed, and a mask pattern 23 for novel ion implantation is formed. The section of the mask pattern 23 is thinned where near by its end. An implantation layer 24 is formed through the second ion implantation by using the mask pattern 23. The mask pattern is removed, and an implanted element is activated through annealing for 20min at 800 deg.C. A source electrode 25, a drain electrode 26 and a gate electrode 27 are formed by using a normal method. |
