| 摘要 |
<p>Method and apparatus for liquid phase epitaxy, where a predetermined number of liquid phase melts are provided in a melt holder (1), whereafter a substrate (17) is brought into contact with the melts in turn for growing a number of epitaxial layers on the substrate (17) corresponding to the number of melts. In accordance with the invention the substrate (17) is kept at a lower temperature than the melt temperature during heating the melt, for being brought adjacent the melt holder (1) just before the growing phase. To eliminate the risk of the substrate transferring drops from one melt to a subsequent melt and thereby contaminate the latter, the melts are tapped off in turn down into a melt collector (11) as soon as growth has taken place in contact with the respective melt. </p> |
