发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 PURPOSE:To reduce remarkably power consumption by dividing a CMOS circuit into a plurality of semiconductor region, making each of the semiconductor regions electrically independent, and connecting electric power sources in each semiconductor region in series for power supplying. CONSTITUTION:In CMOS circuit parts 1 and 2, many CMOS logic circuits composed of a P-channel MOS transistor M1 and an N-channel MOS transistor M2 are formed. Each of the CMOS circuit parts 1 and 2 is formed electrically independently with each other, whose electric power source inputs are connected in series, and a source voltage Vcc1 is supplied from the both ends of this series connection. Thus a source current i1 flows to the ground potential through the CMOS circuit parts 1 and 2. An interface (I/F) part 3 is driven directly by the original high source voltage Vcc1, and contains the functions of level-shift and level-conversion, which convert the output and input signal levels of each of the CMOS circuits 1 and 2 into the ordinary CMOS levels. The power consumption of CMOS circuits formed in a semiconductor integrated circuit device can be remarkably reduced, thereby.
申请公布号 JPS62105463(A) 申请公布日期 1987.05.15
申请号 JP19850243971 申请日期 1985.11.01
申请人 HITACHI LTD 发明人 HAIJIMA MIKIO;INABA TORU
分类号 H01L21/822;G11C11/401;G11C11/407;H01L21/8238;H01L21/8249;H01L27/04;H01L27/06;H01L27/092 主分类号 H01L21/822
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