发明名称 HYBRID TYPE INTEGRATED CIRCUIT DEVICE
摘要 In an integrated circuit device comprising a heat sink (3), an insulating layer (4) formed on the heat sink conductor films (5a,5b) disposed on the insulating layer (4) in a desired pattern, and circuit elements such as semiconductors connected between the conductor films to constitute a desired circuit, the heat sink has fibers of carbon or the like embedded in a metal matrix of copper or the like. The fibers have a thermal expansion coefficient substantially equal to or lower than that of the insulating layer. With the above construction, heat generated in the circuit elements can sufficiently be transferred to the heat sink by way of the thin insulating layer and distortion caused by the heat generation in the interface between the heat sink and the insulating layer can be minimized to thereby prevent damage of the insulating layer.
申请公布号 DE2966920(D1) 申请公布日期 1984.05.24
申请号 DE19792966920 申请日期 1979.10.04
申请人 HITACHI, LTD. 发明人 KUNIYA, KEIICHI;ARAKAWA, HIDEO;NAMEKAWA, TAKASHI;OHASHI, MASABUMI;ASAHI, NAOTATSU;OGAWA, TAKUZO
分类号 C22C49/00;H01L21/52;H01L23/12;H01L23/14;H01L23/373;H01L23/538 主分类号 C22C49/00
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