| 摘要 |
PURPOSE:To obtain a magnetic bubble memory element which has good operation characteristics by providing two kinds of gate and using them properly. CONSTITUTION:Two kinds of gate are provided on a crystal substrate 1. Namely, one gate has ''Permalloy'' first constitution which has a ''Permalloy'' pattern 6 under a conductor pattern 8 and has excellent operation characteristics without any step in the pattern 6, and the other has conductor first constitution which has the conductor pattern 4 under the pattern 6. Then, the ''Permalloy'' first constitution gate is used for a low-current replicator, etc., and the conductor first constitution is used for a high-current replicator, etc.; the gate are used properly to realize the magnetic bubble memory element which has the excellent operation characteristics. |
