| 摘要 |
PURPOSE:To prevent blooming and smear phenomena by applying a protein thin coating film dyed by a yellow dye to the entire image pickup plane of a solid- state image pickup element excepting for the photodetecting section. CONSTITUTION:In figure, 13 is a passivation film, 14 is a thin film yellow filter coated on the entire picture element plane except the photosensing part 1, and the yellow filter 14 has is formed with a protein thin film dyed with yellow dye and has light transmission characteristics of about 50% at a 500nm of wavelength of light. Figure shows a distance when a light invaded to a silicon single crystal substrate 10 is reached. The generation of charge due to the incident light is recognized only to a depth of 0.7-0.8mum through the yellow filter 14. But the charge is generated up to about 6mum depth at a long wavelength of 700nm. Thus, the generation of charge generated at the depth of the semiconductor substrate 10 being a cause to blooming and smear phenomena is suppressed surely by the yellow filter 14. |
