| 摘要 |
PURPOSE:To unnecessitate the gold plating to be performed on the external connection terminal of the titled semiconductor device by a method wherein, when the electrode and the wire of a semiconductor element are joined together by performing a thermo-press welding, said wire and the external connection terminal are connected by performing an electric welding. CONSTITUTION:A gold wire 3 is led out through the intermediary of the capillary 6, the inner part of insulating material 1 such as ceramic and the like and the external part made of conductive material 2 such as tungsten and the like. The electrode and the gold wire 3 of the semiconductor element 4 are bonded by performing a thermo-press welding, but the external connection terminal 5 and the gold wire 3 are bonded by performing an electric spot welding by running the current I on the conductive material 2 of the capillary 6. Consequently, as the external connection terminal and the gold wire 3 are bonded using no thermo-press welding, the gold plating on the bonding surface of the external connection terminal 5 can be unnecessitated. |
