发明名称 CHEMICAL VAPOR DEPOSITION
摘要 PURPOSE:To prevent the separation of a film, by providing a back-blow device having a nozzle on the downstream side of a substrate, and jetting out an inert gas from the nozzle toward the upstream side of the back-blow device. CONSTITUTION:A heater 20 is provided around the outer periphery of a decomposition furnace 10, and a support 30 for mounting a substrate 40 is provided inside the furnace 10. A material gas inlet part 50 is provided at one end of the furnace 10, and an exhaust gas outlet part 80 is provided at the other end. A material gas 60 and a carrier gas 70 are passed through respective valves 61, 71 and supplied as a mixed gas 85 to the furnace 10. Thus, the material gas 60 is thermally decomposed in the decomposition zone to grow a film on the substrate 40. A back-blow device 90 is provided on the downstream side of the substrate 40. An inert gas 97 is jetted out from a nozzle 93 of the back-blow device 90 toward the upstream side thereof counter to the flow of the mixed gas 85. As the inert gas used for back blow, it is possible to employ an inorganic gas, such as helium, neon, argon, krypton, xenon, nitrogen, hydrogen and carbon dioxide, or an organic gas, such as methane and ethane.
申请公布号 JPS5989408(A) 申请公布日期 1984.05.23
申请号 JP19820199061 申请日期 1982.11.15
申请人 MITSUI TOATSU KAGAKU KK 发明人 KITAGAWA YORIHISA;HIROSE ZENKOU;ISOTANI KAZUYOSHI;ASHIDA YOSHINORI
分类号 H01L31/04;C23C16/44;H01L21/205 主分类号 H01L31/04
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