| 摘要 |
PURPOSE:To permit even a film with an exceedingly small thickness to display a high ion-blocking performance, by adding a substance having a density higher than that of carbon to an ordinary photoresist agent as a mask-forming photoresist agent. CONSTITUTION:In the case of selectively implanting ions, a step is provided in which a photosensitive film containing a substance larger in density than carbon is formed on the surface of an object to be subjected to the ion implantation. By thus adding to a photoresist agent a relatively large amount of atoms of a substance, such as silicon, which is higher in ion blocking properties (larger in density) than carbon, it is possible to easily enhance, the ion blocking capability of the photoresist agent. |
