| 摘要 |
PURPOSE:To prevent undesiable inclusion of oxide or hydroxide, by mixing fluorine or hydrogen fluoride into silane having oxygen or oxide mixed therein, and carrying out a thermochemical or plasma chemical reaction. CONSTITUTION:A plurality of pairs of substrates 1 are retained by a holder 19 and disposed in a reaction furnace 2 such as to be parallel to the flow of a reactive gas. After the furnace 2 is evacuated, silane having fluorine mixed therein is introduced into the furnace 2, and thermal or electrical energy is supplied by means of infrared heaters 7, 9 or a high-frequency power source 4, thereby to cause a thermochemical or plasma chemical reaction. If silane has oxygen or oxide mixed therein, silicon oxide or sulicon hydroxide is mixed in a silicon semiconductor film grown on the substrates 1 by the chemical reaction, causing electrical properties thereof to be deteriorated. Therefore, silane is dehydrated or deoxidized by mixing fluorine or hydrogen fluoride therein. |
