| 摘要 |
<p>A high voltage P-N diode includes a P<-> substrate with a thin N<-> epitaxial layer thereon. An N<+> cathode region extends into the N<-> epitaxial layer from the upper surface thereof. A P<+> anode region extends into the N<-> epitaxial layer from its upper surface and surrounds the N<+> cathode region. An N<+> buried layer is situated between the P<-> substrate and the N<-> epitaxial layer, beneath the P<+> anode region, and surrounds the N<+> cathode region, as viewed from above. A further P<+> region extends into the N<-> epitaxial layer from its upper surface and surrounds the N<+> cathode region, and, in turn, is surrounded by the P<+> anode region. In an exemplary embodiment, a MOSFET is included to alternately connect the further P<+> region to the P<-> substrate and to open circuit the further P<+> region. With the further P<+> region open circuited, the P-N diode has a low on-resistance when it operates in its current-conducting state. An embodiment structurally similar to the P-N diode comprises a bipolar transistor having an N<+> emitter region extending into a P<+> base region, which corresponds to the P<+> anode region of the diode.</p> |
