| 摘要 |
PURPOSE:To obtain an LSI device of a high density and high reliability by a method wherein the main surface of a slave substrate shorter in two sides than a master substrate is placed on the latter substrate in opposition and then connected by means of solder bumps or bases, and element regions are hermetically sealed with the bumps and bases which surround functional element parts. CONSTITUTION:The functional elements 7 and 7' at each center of the master substrate 5 and the slave substrate 6 and electrodes 8 and 8' in the periphery are connected. By corresponding to electrodes 9' of the slave substrate 6, connection electrodes 9 are provided at the functional element part 7 of the master substrate 5. Next, the master substrate 5 is covered with a projection film 10, the electrode pads 8 and the connection electrode parts 9 are exposed, Ti 12 and Pt 13 are laminated, the Sn-Pb solder bases 11 are formed to a hight of 10- several ten mum, and junction bases are likewise formed to the electrodes 9' of the slave substrate 6. The bumps can be provided. At the same time, a sealing metallic dam 14 of a solder alloy is formed in the periphery of the groups of the electrodes pads 9 and 9' by surrounding the functional element regions 7 and 7'. When solder is fused by mounting the substrate 6 on the substrate 5, the functional element regions 7 and 7' are connected and hermetically sealed with the solder dam 14. |
