Gate turn-off thyristor with selective anode penetrating shorts

摘要

A gate turn-off thyristor of a short-circuited emitter configuration comprises a semiconductor substrate of a PE-NB-PB-NE four-layer structure, wherein a PE-layer is short-circuited through a NB-layer and an anode. The NB-layer includes heavily doped regions to which the anode is ohmic contacted with a low resistance. The PE-layer is provided at a location at least covered by a projection of the NE-layer. The thickness of the heavily doped regions is greater than that of the PE-layer. The improved structure assures satisfactory gate turn-off characteristics, although the semiconductor substrate is not doped with a life time killer impurity.