| 摘要 |
PURPOSE:To prevent the generation of the defective connection, etc. of a gold bonding wire by coating the surface of the principal section of the semiconductor device with a heating adhesive silicon curing body and heating and bonding the curing body. CONSTITUTION:The principal section of a semiconductor chip 1 is coated with a heating adhesive silicon rubber film as the heating adhesive silicon curing body 7, the curing body is heated and bonded, and the heating adhesive silicon rubber film is arranged so as not to be brought into contact with the bonding wires 3 and bonding pads 2, and sealed and molded by an epoxy seal resin 6 together with the bonding pads 2, the bonding wires 3 and one parts of lead wires 4 for external connection. The bonding wires 3 are not disconnected even at cycle number of 1,000 times when the IC is used for a heat cycle test, the bonding wires 3 are not disconnected even at cycle number of 600 times when it is used for a thermal shock test, and the bonding wires 3 are not disconnected even when a silicon compound for radiation is applied and it is used for a thermal fatigue test. |
