| 摘要 |
PURPOSE:To eliminate etching in the lateral direction and to obtain a necessary pattern by forming a chromium metal layer in an atmosphere of pure gaseous carbonic acid alone or a pure mixture of this and other gas. CONSTITUTION:A chromium metal film is formed by the vacuum vapor deposition in an atm. of CO2 in 5X10<->-1X10<-3> Torr, and further vapor deposition is carried out by adding 1X10<-4>-1X10<-3> Torr O2 to 5X10<-4> Torr CO2 to form an atm. of gaseous mixture. In this case, a chromium oxide contg. C is formed, etching speed in the lateral direction is made minimum, the chromium oxide film acts as a reflection preventing film, and reduces an amt. of multiple reflected lights at the time of exposure. This chromium oxide film contg. CO2 has a function of reducing etching in the lateral direction even if it is formed on the ordinary chromium film. |
