| 摘要 |
<p>PURPOSE:To improve the area of safety operation of a longitudinal MOSFET by arranging a source pad section at the central section of a chip while preventing the arrangement of a unit cell immediately under the pad. CONSTITUTION:The electrode arrangement of the lateral MOSFET consists of a gate electrode 4 made of poly Si, a field limiting ring p type layer 9 for relaxing an electric field, an n<+> type layer 10 for a channel stopper, an Al film 11 resistance-connected to the n<+> type layer 10, etc. The bonding pad S for a source is formed at the central section of the chip, a p type diffusion layer 12 is formed immediately under the bonding pad, and the cell of the MOSFET is not formed to the section. A bonding pad G for a gate is formed at the corner section of the chip separated from the position of the bonding pad S for the source. Accordingly, currents do not flow because the cell of the MOSFET is not formed at the central section of the semiconductor chip to which the bonding pad for the source is formed. As a result, the MOSFET is difficult to be broken. Consequently, the ASO in a small current high voltage region is improved particularly.</p> |
