发明名称 BASE DRIVING CIRCUIT OF TRANSISTOR
摘要 PURPOSE:To make a titled circuit have a high efficiency and to make it small- sized by Darlington-connecting an MOSFET between the collector and the base of a bipolar transistor, and also connecting a switching element and a reverse bias electric power source between said base and the emitter. CONSTITUTION:When DC voltage is applied and an MOSFET 12 is turned on, a forward direction base current IB1 of a bipolar transistor 1 for electric power flows as shown in the figure. On the other hand, a capacitor 11 is charged with a forward direction voltage drop voltage portion of a diode 10 through a resistance 9. Subsequently, when a transistor 7 is turned off and a transistor 8 is turned on, a reverse direction base current IB2 flows as shown in the figure. This reverse direction base current IB2 is used for drawing out an accumulation carrier of the transistor 1, and when the carrier is eliminated, the current IB2 does not flow.
申请公布号 JPS5986921(A) 申请公布日期 1984.05.19
申请号 JP19820197114 申请日期 1982.11.10
申请人 TOSHIBA KK 发明人 KOBAYASHI SUMIO
分类号 H03K17/04;H03K17/567 主分类号 H03K17/04
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