| 摘要 |
PURPOSE:To obtain a monitoring method which is inexpensive without labor in operation by monitoring substantially continuous variation of interfering waveform by a formed film or an etched film and detecting the fact that the film reached the desired thickness. CONSTITUTION:A computation or test is intended to combine both of the required thickness of a CVD film and the wavelength of a laser ray to obtain the progress degree of a set wavelength. Then, a set level and the number of passing the set level are set in a setter 5. Reaction gas for forming a CVD film on the wafer 8 is flowed in the prescribed quantity from a controller 6 into a reaction tube 2a. Thus, the CVD film is gradually thickly grown on the wafer 8. The grown state of the CVD film is detected as the interference waveform by a CVD film thickness detector 3 by the laser ray. This interfering waveform is amplified by a monitor 4, and monitored. Then, the number of the sets to the set level is counted in advance at the thickness setting stage on the basis of the waveform 9, and then the supply of the reaction gas to the tube 2a is stopped. In this manner, the prescribed CVD film can be grown on the wafer 8. |
